BC546 NPN General Purpose Transistor 65V 100mA TO-92 (100 pcs).
BC546 NPN General Purpose Transistor 65V 100mA TO-92 (100 pcs).

BC546 NPN General Purpose Transistor 65V 100mA TO-92 (100 pcs)

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SKU: BE01503
Availability : In Stock Pre order Out of stock
Categories: Transistors
Description
Description:-
BC546 NPN Amplifier Transistor with 65V DC Emiiter Voltage and 100mA current made through P and N type Semiconductor.
When a Semiconductor is placed in center between same type semiconductors the Arrangement is Called Transistor.
Consist of three layers of a semiconductor device, Each capable of moving a current.
Semiconductor is a made by Germanium and Silicon that conducts electricity also it is combination of two Diode.
Used for Mobile phones, Industrial Control, Television and Flip-flops, High Frequency Application such as Radio Frequency Audio Circuit.
Features:
NPN Amplifier Transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit.
The NPN Amplifier Transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems.
NPN Amplifier Transistor very small size and weight, reducing equipment size. Operates at low operating voltages compatible with batteries of only a few cells.
NPN Amplifier Transistor are circuits with greater energy efficiency are usually possible. Used for low-power applications.

Specifications:-
Transistor Polarity: NPN
Collector-Base Voltage (VCBO): 80VDC
Collector-Emitter Voltage (VCEO): 65VDC
Emitter-Base Voltage (VEBO): 6VDC
Continuous Collector Current (IC): 100mA
Output Capacitance (Cobo): 4.5pF
Transition Frequency (fT): 300MHz
DC Current Gain (hFE): 110-450
Operating Temperature Range: -55 - 150?C
Power Dissipation (PD): 625mW

Product Includes:-
100x BC546 NPN General Purpose Transistor 65V 100mA TO-92

  • Collector-Base Voltage (VCBO): 80VDC
  • Transistor Polarity: NPN
  • Power Dissipation (PD): 625mW
  • Operating Temperature Range: -55 - 150°C
  • Three layers of a semiconductor device, Each capable of moving a current.