BD139 NPN Bipolar Medium Power Transistor 80V 1.5A(10 pcs)
Including GST (No Hidden Charges)
Checkout securely with
Description
Description:-
BD139 is a three layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.
Features:
Low saturation voltage
Simple drive requirements
High safe operating area
For low distortion complementary designs
Easy to carry and handle
Specifications:-
Transistor Polarity: NPN
Collector?Emitter Voltage (VCEO): 80V
Collector?Base Voltage (VCBO): 80V
Continuous Collector Current (Ic): 1.5A
Continuous Base Current (Ib): 0.5A
DC Current Gain (hFE): 40-250
Operating Temperature Range: -65 - 150?C
Power Dissipation (Pd): 12.5W
Thermal Resistance (?JA): 100?C/W
Product Includes:-
10x BD139 NPN Bipolar Medium Power Transistor 80V 1.5A
BD139 is a three layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.
Features:
Low saturation voltage
Simple drive requirements
High safe operating area
For low distortion complementary designs
Easy to carry and handle
Specifications:-
Transistor Polarity: NPN
Collector?Emitter Voltage (VCEO): 80V
Collector?Base Voltage (VCBO): 80V
Continuous Collector Current (Ic): 1.5A
Continuous Base Current (Ib): 0.5A
DC Current Gain (hFE): 40-250
Operating Temperature Range: -65 - 150?C
Power Dissipation (Pd): 12.5W
Thermal Resistance (?JA): 100?C/W
Product Includes:-
10x BD139 NPN Bipolar Medium Power Transistor 80V 1.5A
- Collector−Emitter Voltage (VCEO): 80V
- Continuous Collector Current (Ic): 1.5A
- Operating Temperature Range: -65 - 150°C
- Thermal Resistance (ΘJA): 100°C/W
BD139 NPN Bipolar Medium Power Transistor 80V 1.5A(10 pcs)